EDN

Infineon shows full chip employing finFET circuits

Infineon Technologies announced today that researchers have completed testing of a full integrated circuit built with multigate finFET transistors. The approximately 3000-transistor chip, fabricated ...
Nanowerk

FinFET with the world's smallest characteristics variability

(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...
Semiconductor Engineering

Automatic Layout Generator Targeting Region-based Layouts for Advanced FinFET-Based Full-Custom Circuits (UT Austin/NVIDIA)

A technical paper titled “AutoCRAFT: Layout Automation for Custom Circuits in Advanced FinFET Technologies” was published by researchers at UT Austin and NVIDIA. “This paper presents AutoCRAFT, an ...
Design-Reuse

FinFETs, Analog Circuits, and Your Next System Design

Everyone is talking about FinFETs—arguably the biggest change in transistors since commercialization of the MOSFET in the 1960s. And nearly everyone—except perhaps enthusiasts of fully-depleted ...
Electronics Weekly

Infineon makes chip using FinFets

Infineon Technologies has announced that its researchers have completed testing of a full integrated circuit built with multigate FinFet transistors. Infineon Technologies has announced that its ...
Science Daily

New 'FinFETs' Promising For Smaller Transistors, More Powerful Chips

Researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create faster and more ...
Nanowerk

Improved bulk FinFET fabrication process

(Nanowerk News) Bulk FinFETs are key devices for advanced technology node applications such as analog circuits and SRAMs because of a very good short channel effect control and transistor compactness.
Phys.org

Heated ion implantation technology realizes low resistance of an ultra-thin fin

Japanese researchers at AIST led by Meishoku Masahara have developed a low-resistance source/drain formation technology that can be applied in the finFETs of 14-nm generation and beyond. The greatest ...
Semiconductor Engineering

Will Self-Heating Stop FinFETs

New transistor designs and new materials don’t appear out of thin air. Their adoption always is driven by the limitations of the incumbent technology. Silicon germanium and other compound ...
Design-Reuse

Mentor Graphics Certified for TSMC 10nm FinFET Process Technology

Mentor Graphics Corp. (NASDAQ: MENT) today announced TSMC has certified Calibre® nmPlatform for 10nm FinFET V0.9 process. The Mentor® Analog FastSPICE™ circuit verification platform has achieved ...
EurekAlert!

New 'finFETS' promising for smaller transistors, more powerful chips

WEST LAFAYETTE, Ind. - Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling ...